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FUJITSU MICROELECTRONICS DATA SHEET
DS04-27254-2E
ASSP for Power Management Applications
2 ch DC/DC Converter IC Built-in Switching FET, Synchronous Rectification, and Down Conversion Support
MB39C015
DESCRIPTION
The MB39C015 is a current mode type 2-channel DC/DC converter IC built-in voltage detection, synchronous rectifier, and down conversion support. The device is integrated with a switching FET, oscillator, error amplifier, PWM control circuit, reference voltage source, and voltage detection circuit. External inductor and decoupling capacitor are needed only for the external component. As combining with external parts enables a DC/DC converter with a compact and high load response characteristic, this is suitable as the built-in power supply for such as mobile phone/PDA, DVDs, and HDDs.
FEATURES
* * * * * * * * * * * * High efficiency : 96% (Max) Output current (DC/DC) : 800 mA/ch (Max) Input voltage range : 2.5 V to 5.5 V Operating frequency : 2.0 MHz (Typ) No flyback diode needed Low dropout operation : For 100% on duty Built-in high-precision reference voltage generator : 1.30 V 2% Consumption current in shutdown mode : 1 A or less Built-in switching FET : P-ch MOS 0.3 (Typ) N-ch MOS 0.2 (Typ) High speed for input and load transient response in the current mode Over temperature protection Packaged in a compact package : QFN-24
APPLICATIONS
* * * * * * * * * Flash ROMs MP3 players Electronic dictionary devices Surveillance cameras Portable GPS navigators DVD drives IP phones Network hubs Mobile phones etc.
Copyright(c)2008 FUJITSU MICROELECTRONICS LIMITED All rights reserved 2008.8
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MB39C015
PIN ASSIGNMENT
(Top View)
LX2 DGND2 DGND2 DGND1 DGND1 LX1 18 DVDD2 19 17 16 15 14 13 12 DVDD1
DVDD2
20
11
DVDD1
OUT2
21
10
OUT1
MODE2
22
9
MODE1
VREFIN2
23
8
VREFIN1
XPOR
24 1 CTLP 2 CTL2 3 CTL1 4 AGND 5 AVDD 6 VREF
7
VDET
(LCC-24P-M09)
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DS04-27254-2E
MB39C015
PIN DESCRIPTIONS
Pin No. 1 2/3 4 5 6 7 8/23 9/22 10/21 11, 12/ 19, 20 13/18 14, 15/ 16, 17 24 Pin Name CTLP CTL2/CTL1 AGND AVDD VREF VDET VREFIN1/VREFIN2 MODE1/MODE2 OUT1/OUT2 DVDD1/DVDD2 LX1/LX2 DGND1/DGND2 XPOR I/O I I O I I I I O O Description Voltage detection circuit block control input pin. (L : Voltage detection function stop / H : Normal operation) DC/DC converter block control input pin. (L : Shut down / H : Normal operation) Control block ground pin. Control block power supply pin. Reference voltage output pin. Voltage detection input pin. Error amplifier (Error Amp) non-inverted input pin. Use pin at L level or leave open. Output voltage feedback pin. Drive block power supply pin. Inductor connection output pin. High impedance durng shut down. Drive block ground pin. VDET circuit output pin. Connected to an N-ch MOS open drain circuit.
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MB39C015
I/O PIN EQUIVALENT CIRCUIT DIAGRAM
VDD
VDD
LX1, LX2
VREF
GND
GND
VDD
VREFIN1, VREFIN2, VDET

OUT1, OUT2
GND
VDD
CTL1, CTL2, CTLP
GND
VDD XPOR

MODE1, MODE2
GND
GND
* : ESD Protection device
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DS04-27254-2E
MB39C015
BLOCK DIAGRAM
VIN AVDD CTL1 3 ON/OFF OUT1 10 x3 ERR Amplifier DVDD1 5 DVDD1 11, 12 DVDD2 19, 20
- +
IOUT Comparator VREFIN1 DAC 8 PWM Logic Control MODE1 9 GND VIN CTLP VDET VREF CTL2 1 7 1.30 V 6 VREF 2 ON/OFF x3 ERR Amplifier DVDD2 + - ON/OFF 24 XPOR VIN LX1 13 VOUT1
OUT2
21
- +
IOUT Comparator VREFIN2 23 PWM Logic MODE2 22 GND Control LX2 18 VOUT2
4 AGND
14, 15 DGND1
16, 17 DGND2
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MB39C015
* Current mode * Original voltage mode type : Stabilize the output voltage by comparing two items below and on-duty control. - Voltage (VC) obtained through negative feedback of the output voltage by Error Amp - Reference triangular wave (VTRI) * Current mode type : Instead of the triangular wave (VTRI), the voltage (VIDET) obtained through I-V conversion of the sum of currents that flow in the oscillator (rectangular wave generation circuit) and SW FET is used. Stabilize the output voltage by comparing two items below and on-duty control. - Voltage (VC) obtained through negative feedback of the output voltage by Error Amp - Voltage (VIDET) obtained through I-V conversion of the sum of current that flow in the oscillator (rectangular wave generation circuit) and SW FET
Voltage mode type model
VIN
Current mode type model
VIN
Oscillator
Vc VTRI
- +
Vc VIDET
+ -
S R
Q
SR-FF
Vc VTRI ton
VIDET Vc toff
toff
ton
Note : The above models illustrate the general operation and an actual operation will be preferred in the IC.
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DS04-27254-2E
MB39C015
FUNCTION OF EACH BLOCK
* PWM Logic control circuit The built-in P-ch and N-ch MOS FETs are controlled for synchronization rectification according to the frequency (2.0 MHz) oscillated from the built-in oscillator (square wave oscillation circuit). * IOUT Comparator circuit This circuit detects the current (ILX) which flows to the external inductor from the built-in P-ch MOS FET. By comparing VIDET obtained through I-V conversion of peak current IPK of ILX with the Error Amp output, the builtin P-ch MOS FET is turned off via the PWM Logic Control circuit. * Error Amp phase compensation circuit This circuit compares the output voltage to reference voltages such as VREF. This IC has a built-in phase compensation circuit that is designed to optimize the operation of this IC. This needs neither to be considered nor addition of a phase compensation circuit and an external phase compensation device. * VREF circuit A high accuracy reference voltage is generated with BGR (bandgap reference) circuit. The output voltage is 1.30 V (Typ). * Voltage Detection (VDET) circuit The voltage detection circuit monitors the voltage at the VDET pin. Normally, use the XPOR pin through pull-up with an external resistor. When the VDET pin voltage reaches 0.6 V, it reaches the H level. Timing chart example : (XPOR pin pulled up to VIN)
VIN VUVLO
CTLP
VDET
VTHHPR VTHLPR
XPOR
VUVLO : UVLO threshold voltage VTHHPR, VTHLPR : XPOR threshold voltage * Protection circuit This IC has a built-in over-temperature protection circuit. The over-temperature protection circuit turns off both N-ch and P-ch switching FETs when the junction temperature reaches + 135 C. When the junction temperature comes down to + 110 C, the switching FET is returned to the normal operation. Since the PWM control circuit of this IC is in the control method in current mode, the current peak value is also monitored and controlled as required. DS04-27254-2E
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MB39C015
* Function table Input MODE Shutdown mode H L L Operating mode H L H CTL1 CTL2 L L H L H H L H L L H L H H Functional Stopped Stopped Functional Stopped Functional CTLP Output CH1 function CH2 function VDET function Stopped Stopped Functional Stopped Functional Functional Outputs 1.3 V VREF function
Stopped Stopped Functional Stopped Functional Functional Stopped Functional
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DS04-27254-2E
MB39C015
ABSOLUTE MAXIMUM RATINGS
Parameter Power supply voltage Symbol VDD Condition AVDD = DVDD1 = DVDD2 OUT1/OUT2 pins Signal input voltage VISIG CTLP, CTL1/CTL2, MODE1/MODE2 pins VREFIN1/VREFIN2 pins VDET pin XPOR pull-up voltage LX voltage LX Peak current VIXPOR VLX IPK XPOR pin LX1/LX2 pins ILX1/ILX2 Ta +25 C Power dissipation PD Ta = +85 C Operating ambient temperature Storage temperature Ta TSTG Rating Min -0.3 -0.3 -0.3 -0.3 -0.3 -0.3 -0.3 -40 -55 Max +6.0 VDD + 0.3 VDD + 0.3 VDD + 0.3 VDD + 0.3 +6.0 VDD + 0.3 1.8 3125*1, *2, *3 1563*1, *2, *4 1250*1, *2, *3 625*1, *2, *4 +85 +125 V V A mW mW C C V Unit V
*1 : Power dissipation value between + 25 C and + 85 C is obtained by connecting these two points with straight line. *2 : When mounted on a four-layer epoxy board of 11.7 cm x 8.4 cm *3 : Connection at exposure pad with thermal via. (Thermal via 9 holes) *4 : Connection at exposure pad, without a thermal via. Notes: * The use of negative voltages below - 0.3 V to the AGND, DGND1, and DGND2 pin may create parasitic transistors on LSI lines, which can cause abnormal operation. * This device can be damaged if the LX pins are short-circuited to AVDD and DVDD1/DVDD2, or AGND and DGND1/DGND2. WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
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MB39C015
RECOMMENDED OPERATING CONDITIONS
Parameter Power supply voltage VREFIN voltage CTL voltage LX current Symbol VDD VREFIN VCTL ILX ILX1/ILX2 2.5 V AVDD = DVDD1 = DVDD2 < 3.0 V 3.0 V AVDD = DVDD1 = DVDD2 5.5 V Condition AVDD = DVDD1 = DVDD2 CTLP, CTL1, CTL2 Value Min 2.5 0.15 0 Typ 3.7 2.2 Max 5.5 1.30 5.0 800 0.5 mA 1 1 mA H Unit V V V mA
VREF output current
IROUT
XPOR current Inductor value
IPOR L
Note : The output current from this device has a situation to decrease if the power supply voltage (VIN) and the DC/DC converter output voltage (VOUT) differ only by a small amount. This is a result of slope compensation and will not damage this device. WARNING: The recommended operating conditions are required in order to ensure the normal operation of the semiconductor device. All of the device's electrical characteristics are warranted when the device is operated within these ranges. Always use semiconductor devices within their recommended operating condition ranges. Operation outside these ranges may adversely affect reliability and could result in device failure. No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their representatives beforehand.
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DS04-27254-2E
MB39C015
ELECTRICAL CHARACTERISTICS
(Ta = +25 C, AVDD = DVDD1 = DVDD2 = 3.7 V, VOUT1/VOUT2 setting value = 2.5 V, MODE1/MODE2 = 0 V) Parameter Input current Output voltage Input stability Load stability OUT pin input impedance LX Peak current DC/DC converter block Oscillation frequency Rise delay time SW NMOS-FET OFF voltage SW PMOS-FET ON resistance SW NMOS-FET ON resistance LX leak current Overheating protection (Junction Temp.) SymPin No. bol IREFIN VOUT LINE LOAD ROUT IPK fosc tPG VNOFF RONP 13, 18 RONN ILEAKM ILEAKH TOTPH TOTPL VTHHUV VTHLUV VHYSUV 5, 11, 12, 19, 20 LX1/LX2 = -100 mA 0 LX VDD*2 VDD = 5.5 V, 0 LX VDD*2 7 XPOR = 25 A 24 IOH XPOR = 5.5 V 1.0 A - 1.0 - 2.0 + 120* + 95* 2.17 2.03 0.08 575 558 0.20 + 135* + 110* 2.30 2.15 0.15 600 583 17 0.42 + 8.0 + 16.0 + 160* + 125* 2.43 2.27 0.25 625 608 0.1 A A C C V V V mV mV mV V 13, 18 2, 3, 10, 21 8, 23 Condition VREFIN = 0.15 V to 1.3 V VREFIN = 0.833 V, OUT = -100 mA 10, 21 2.5 V AVDD = DVDD1 = DVDD2 5.5 V*1 -100 mA OUT -800 mA OUT = 2.0 V Output shorted to GND C1/C2 = 4.7 F, OUT = 0 A, OUT1/OUT2 : 0 90% VOUT LX1/LX2 = -100 mA Value Min - 100 2.45 0.6 0.9 1.6 Typ 0 2.50 1.0 1.2 2.0 45 - 10* 0.30 Max + 100 2.55 10 10 1.5 1.7 2.4 80 0.48 Unit nA V mV mV M A MHz s mV
Protection UVLO threshold circuit voltage block UVLO hysteresis width
XPOR threshold VTHHPR voltage VTHLPR
Voltage detection circuit block
XPOR hysteresis width XPOR output voltage XPOR output current
VHYSPR VOL
* : Standard design value (Continued) DS04-27254-2E
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MB39C015
(Continued) (Ta = +25 C, AVDD = DVDD1 = DVDD2 = 3.7 V, VOUT1/VOUT2 setting value = 2.5 V, MODE1/MODE2 = 0 V) Parameter CTL threshold voltage CTL pin input current Symbol Pin No. VTHHCT VTHLCT IICTL VREF LOADREF IVDD1 6 1, 2, 3 Condition 0 V CTLP/CTL1/CTL2/ 3.7 V VREF = 0 mA VREF = -1.0 mA CTLP/CTL1/CTL2 = 0 V State of all circuits OFF*3 CTLP/CTL1/CTL2 = 0 V, VDD = 5.5 V State of all circuits OFF*3 1. CTLP = 0 V, CTL1 = 3.7 V, CTL2 = 0 V 2. CTLP = 0 V, CTL1 = 0 V, CTL2 = 3.7 V OUT = 0 A Value Min 0.55 0.40 1.274 Typ 0.95 0.80 1.300 Max 1.45 1.30 1.0 1.326 20 1.0 Unit V V A V mV A A
Control block
Reference VREF voltage voltage VREF Load block stability
Shut down power supply current
IVDD1H
1.0
General
Power supply current (DC/DC mode)
IVDD31
3.5
10
mA
IVDD32 Power supply current (voltage detection mode) Power-on invalid current
5, 11, 12, 19, CTLP = 0 V, CTL1/CTL2 = 20 3.7 V, OUT = 0 A CTLP = 3.7 V, CTL1/CTL2 = 0 V,
7.0
20.0
mA
IVDD5
15
24
A
IVDD
1. CTL1 = 3.7 V, CTL2 = 0 V 2. CTL1 = 0 V, CTL2 = 3.7 V VOUT1/VOUT2 = 90% OUT = 0 A*4
1000
2000
A
*1 : The minimum value of AVDD = DVDD1 = DVDD2 is the 2.5 V or VOUT setting value + 0.6 V, whichever is higher. *2 : The + leak at the LX pin includes the current of the internal circuit. *3 : Sum of the current flowing into the AVDD, the DVDD1, and the DVDD2 pins. *4 : Current consumption based on 100% ON-duty (High side FET in full ON state). The SW FET gate drive current is not included because the device is in full ON state (no switching operation). Also the load current is not included.
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DS04-27254-2E
MB39C015
TEST CIRCUIT FOR MEASURING TYPICAL OPERATING CHARACTERISTICS
VDD SW CTL1/CTL2 R1 AVDD MODE1/MODE2 C3 L1 R3-1 R3-2 R5 R6 VREF VDET LX1/LX2 OUT1/OUT2 C1 GND IOUT VOUT1/ VOUT2 DVDD1/DVDD2 C2 MB39C015 VDD VIN
DGND1/DGND2 VREFIN1/VREFIN2 AGND C6
R4
Output voltage = VREFIN x 3.01
Component R1 R3-1 R3-2 R4 R5 R6 C1 C2 C3 C6 L1
Specification 1 M 20 k 150 k 300 k 510 k 100 k 4.7 F 4.7 F 0.1 F 0.1 F 2.2 H
Vendor KOA SSM SSM SSM KOA SSM TDK TDK TDK TDK TDK
Part Number RK73G1JTTD D 1 M RR0816-203-D RR0816-154-D RR0816-304-D RK73G1JTTD D 510 k RR0816-104-D C2012JB1A475K C2012JB1A475K C1608JB1E104K C1608JB1H104K VLF4012AT-2R2M
Remarks
VOUT1/VOUT2 = 2.5 V Setting
For adjusting slow start time
Note : These components are recommended based on the operating tests authorized. TDK : TDK Corporation SSM : SUSUMU Co., Ltd KOA : KOA Corporation
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MB39C015
APPLICATION NOTES
[1] Selection of components * Selection of an external inductor Basically it dose not need to design inductor. This IC is designed to operate efficiently with a 2.2 H inductor. The inductor should be rated for a saturation current higher than the LX peak current value during normal operating conditions, and should have a minimal DC resistance. (100 m or less is recommended.) LX peak current value IPK is obtained by the following formula. IPK = IOUT + VIN - VOUT L x D fosc x 1 2 = IOUT + (VIN - VOUT) x VOUT 2 x L x fosc x VIN
L IOUT VIN VOUT D fosc
: External inductor value : Load current : Power supply voltage : Output setting voltage : ON-duty to be switched ( = VOUT/VIN) : Switching frequency (2 MHz)
ex) When VIN = 3.7 V, VOUT = 2.5 V, IOUT = 0.8 A, L = 2.2 H, fosc = 2.0 MHz The maximum peak current value IPK; IPK = IOUT + (VIN - VOUT) x VOUT 2 x L x fosc x VIN = 0.8 A + (3.7 V - 2.5 V) x 2.5 V 2 x 2.2 H x 2 MHz x 3.7 V
= 0.89 A :
* I/O capacitor selection * Select a low equivalent series resistance (ESR) for the VDD input capacitor to suppress dissipation from ripple currents. * Also select a low equivalent series resistance (ESR) for the output capacitor. The variation in the inductor current causes ripple currents on the output capacitor which, in turn, causes ripple voltages an output equal to the amount of variation multiplied by the ESR value. The output capacitor value has a significant impact on the operating stability of the device when used as a DC/DC converter. Therefore, FUJITSU MICROELECTRONICS generally recommends a 4.7 F capacitor, or a larger capacitor value can be used if ripple voltages are not suitable. If the VIN/VOUT voltage difference is within 0.6 V, the use of a 10 F output capacitor value is recommended. * Types of capacitors Ceramic capacitors are effective for reducing the ESR and afford smaller DC/DC converter circuit. However, power supply functions as a heat generator, therefore avoid to use capacitor with the F-temperature rating ( - 80% to + 20%) . FUJITSU MICROELECTRONICS recommends capacitors with the B-temperature rating ( 10% to 20%). Normal electrolytic capacitors are not recommended due to their high ESR. Tantalum capacitor will reduce ESR, however, it is dangerous to use because it turns into short mode when damaged. If you insist on using a tantalum capacitor, FUJITSU MICROELECTRONICS recommends the type with an internal fuse. 14
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DS04-27254-2E
MB39C015
[2] Output voltage setting The output voltage VOUT (VOUT1 or VOUT2) of this IC is defined by the voltage input to VREFIN (VREFIN1 or VREFIN2) . Supply the voltage for inputting to VREFIN from an external power supply, or set the VREF output by dividing it with resistors. The output voltage when the VREFIN voltage is set by dividing the VREF voltage with resistors is shown in the following formula. VOUT = 3.01 x VREFIN, (VREF = 1.30 V) VREFIN = R2 R1 + R2 x VREF
MB39C015
VREF R1
VREF
VREFIN R2
VREFIN
Note : Refer to " APPLICATION CIRCUIT EXAMPLES" for the an example of this circuit. Although the output voltage is defined according to the dividing ratio of resistance, select the resistance value so that the current flowing through the resistance does not exceed the VREF current rating (1 mA) . [3] About conversion efficiency The conversion efficiency can be improved by reducing the loss of the DC/DC converter circuit. The total loss (PLOSS) of the DC/DC converter is roughly divided as follows : PLOSS = PCONT + PSW + PC PCONT PSW PC : Control system circuit loss (The power used for this IC to operate, including the the gate driving power for internal SW FETs) : Switching loss (The loss caused during switching of the IC's internal SW FETs) : Continuity loss (The loss caused when currents flow through the IC's internal SW FETs and external circuits )
The IC's control circuit loss (PCONT) is extremely small, less than 100 mW (with no load). As the IC contains FETs which can switch faster with less power, the continuity loss (PC) is more predominant as the loss during heavy-load operation than the control circuit loss (PCONT) and switching loss (PSW) . Furthermore, the continuity loss (PC) is divided roughly into the loss by internal SW FET ON-resistance and by external inductor series resistance. DS04-27254-2E
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MB39C015
PC = IOUT2 x (RDC + D x RONP + (1 - D) x RONN) D RONP RONN RDC IOUT : Switching ON-duty cycle ( = VOUT / VIN) : Internal P-ch SW FET ON resistance : Internal N-ch SW FET ON resistance : External inductor series resistance : Load current
The above formula indicates that it is important to reduce RDC as much as possible to improve efficiency by selecting components. [4] Power dissipation and heat considerations The IC is so efficient that no consideration is required in most cases. However, if the IC is used at a low power supply voltage, heavy load, high output voltage, or high temperature, it requires further consideration for higher efficiency. The internal loss (P) is roughly obtained from the following formula : P = IOUT2 x (D x RONP + (1 - D) x RONN) D RONP RONN IOUT : Switching ON-duty cycle ( = VOUT / VIN) : Internal P-ch SW FET ON resistance : Internal N-ch SW FET ON resistance : Output current
The loss expressed by the above formula is mainly continuity loss. The internal loss includes the switching loss and the control circuit loss as well but they are so small compared to the continuity loss they can be ignored. In this IC with RONP greater than RONN, the larger the on-duty cycle, the greater the loss. When assuming VIN = 3.7 V, Ta = + 70 C, for example, RONP = 0.36 and RONN = 0.30 according to the graph "MOS FET ON resistance vs. Operating ambient temperature". The IC's internal loss P is 123 mW at VOUT = 2.5 V and IOUT = 0.6 A. According to the graph "Power dissipation vs. Operating ambient temperature", the power dissipation at an operating ambient temperature Ta of + 70 C is 300 mW and the internal loss is smaller than the power dissipation.
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MB39C015
[5] XPOR threshold voltage setting [VPORH, VPORL] Set the detection voltage by applying voltage to the VDET pin via an external resistor calculated according to this formula. VPORH = VPORL = R3 + R4 R4 R3 + R4 R4 x VTHHPR x VTHLPR
VTHHPR = 0.600 V VTHLPR = 0.583 V Example for setting detection voltage to 3.7 V R3 = 510 k R4 = 100 k VPORH = VPORL = 510 k + 100 k 100 k 510 k + 100 k 100 k x 0.600 = 3.66 = 3.7 [V] : x 0.583 = 3.56 = 3.6 [V] :
VIN MB39C015 AVDD R3 1 M VDET R4 XPOR XPOR
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MB39C015
[6] Transient response Normally, IOUT is suddenly changed while VIN and VOUT are maintained constant, responsiveness including the response time and overshoot/undershoot voltage is checked. As this IC has built-in Error Amp with an optimized design, it shows good transient response characteristics. However, if ringing upon sudden change of the load is high due to the operating conditions, add capacitor C6 (e.g. 0.1 F). (Since this capacitor C6 changes the start time, check the start waveform as well.) This action is not required for DAC input.
MB39C015
VREF R1
VREF
VREFIN R2 C6
VREFIN1/ VREFIN2
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MB39C015
[7] Board layout, design example The board layout needs to be designed to ensure the stable operation of this IC. Follow the procedure below for designing the layout. * Arrange the input capacitor (Cin) as close as possible to both the VDD and GND pins. Make a thru-hole (TH) near the pins of this capacitor if the board has planes for power and GND. * Large AC currents flow between this IC and the input capacitor (Cin), output capacitor (Co), and external inductor (L). Group these components as close as possible to this IC to reduce the overall loop area occupied by this group. Also try to mount these components on the same surface and arrange wiring without thru-hole wiring. Use thick, short, and straight routes to wire the net (The layout by planes is recommended.). * Arrange a bypass capacitor for AVDD as close as possible to both the ADVV and AGND pins. Make a thru-hole (TH) near the pins of this capacitor if the board has planes for power and GND. * The feedback wiring to the OUT should be wired from the voltage output pin closest to the output capacitor (Co). The OUT pin is extremely sensitive and should thus be kept wired away from the LX pin of this IC as far as possible. * If applying voltage to the VREFIN1/VREFIN2 pins through dividing resistors, arrange the resistors so that the wiring can be kept as short as possible. Also arrange them so that the GND pin of VREFIN1/VREFIN2 resistor is close to the IC's AGND pin. Further, provide a GND exclusively for the control line so that the resistor can be connected via a path that does not carry current. If installing a bypass capacitor for the VREFIN, put it close to the VREFIN pin. * If applying voltage to the VDET pin through dividing resistors, arrange the resistors so that the wiring can be kept as short as possible. Also arrange so that the GND pin of the VDET resistor is close to the IC's AGND pin. Further, provide a GND exclusively for the control line so that the resistor can be connected via a path that does not carry current. * Try to make a GND plane on the surface to which this IC will be mounted. For efficient heat dissipation when using the QFN-24 package, FUJITSU MICROELECTRONICS recommends providing a thermal via in the footprint of the thermal pad. * Example of arranging IC SW system parts
Co
Co
L
GND
L
VIN
Cin
Cin
VIN
Feedback line
Feedback line
1pin
GND
VIN
AVDD bypass capacitor
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MB39C015
* Notes for circuit design The switching operation of this IC works by monitoring and controlling the peak current which, incidentally, serves as a form of short-circuit protection. However, do not leave the output short-circuited for long periods of time. If the output is short-circuited where VIN < 2.9 V, the current limit value (peak current to the inductor) tends to rise. Leaving in the short-circuit state, the temperature of this IC will continue rising and activate the thermal protection. Once the thermal protection stops the output, the temperature of the IC will go down and operation will be restarted, after which the output will repeat the starting and stopping. Although this effect will not destroy the IC, the thermal exposure to the IC over prolonged hours may affect the peripherals surrounding it.
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MB39C015
EXAMPLE OF STANDARD OPERATION CHARACTERISTICS
(Shown below is an example of characteristics for connection according to " TEST CIRCUIT FOR MEASURING TYPICAL OPERATING CHARACTERISTICS".) * Characteristics CH1 Conversion efficiency vs. Load current
100
Conversion efficiency vs. Load current
100
Conversion efficiency (%)
Conversion efficiency (%)
90 80 70 60 50 40 30 20 10 0 1
VIN = 3.7 V VIN = 3.0 V
90 80 70 60 50 40 30 20 10 0
VIN = 3.7 V
VIN = 3.0 V VIN = 4.2 V VIN = 5.0 V
VIN = 4.2 V VIN = 5.0 V
Ta = +25 C VOUT = 2.5 V
Ta = +25 C VOUT = 1.2 V
10
100
1000
1
10
100
1000
Load current IOUT (mA) Conversion efficiency vs. Load current
100
Load current IOUT (mA) Conversion efficiency vs. Load current
100
Conversion efficiency (%)
80 70 60 50 40 30 20 10 0 1
VIN = 3.0 V VIN = 4.2 V VIN = 5.0 V
Conversion efficiency (%)
90
VIN = 3.7 V
90 80 70 60 50 40 30 20 10
VIN = 3.7 V
VIN = 4.2 V
VIN = 5.0 V
Ta = +25 C VOUT = 1.8 V
Ta = +25 C VOUT = 3.3 V
10
100
1000
0
1
10
100
1000
Load current IOUT (mA)
Load current IOUT (mA) (Continued)
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MB39C015
Output voltage vs. Input voltage
2.60 2.58 2.60
Output voltage vs. Load current Ta = +25 C VIN = 3.7 V VOUT = 2.5 V setting
Output voltage VOUT (V)
2.56 2.54 2.52 2.50 2.48 2.46 2.44 2.42 2.40 2.0 3.0 IOUT = 0 A
Output voltage VOUT (V)
Ta = +25 C VOUT = 2.5 V setting
2.58 2.56 2.54 2.52 2.50 2.48 2.46 2.44 2.42 2.40
IOUT = 100 mA
4.0
5.0
6.0
0
200
400
600
800
Input voltage VIN (V)
Load current IOUT (mA)
Reference voltage vs. Input voltage
1.40 1.38 1.40
Reference voltage vs. Operating ambient temperature
1.38 VIN = 3.7 V VOUT = 2.5 V IOUT = 0 V
Reference voltage VREF (V)
Reference voltage VREF (V)
1.36 1.34 1.32 1.30 1.28 1.26 1.24 1.22 1.20 2.0 3.0 4.0 IOUT = 100 mA IOUT = 0 A
Ta = +25 C VOUT = 2.5 V
1.36 1.34 1.32 1.30 1.28 1.26 1.24 1.22 1.20 -50
5.0
6.0
0
+50
+100
Input voltage VIN (V)
Operating ambient temperature Ta ( C)
(Continued)
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MB39C015
Input current vs. Input voltage
10 9
Input current vs. Operating ambient temperature
10 9
Input current IIN (mA)
7 6 5 4 3 2 1 0 2.0 3.0 4.0 5.0 6.0
Ta = +25 C VOUT = 2.5 V
Input current IIN (mA)
8
8 7 6 5 4 3 2 1 0 -50 0
VIN = 3.7 V VOUT = 2.5 V
+50
+100
Input voltage VIN (V) Oscillation frequency vs. Input voltage Oscillation frequency fOSC (MHz) Oscillation frequency fOSC (MHz)
2.4 2.3 2.2 2.1 2.0 1.9 1.8 1.7 1.6 2.0 3.0 4.0 5.0 6.0 Ta = +25 C VOUT = 1.8 V IOUT = 100 mA
Operating ambient temperature Ta ( C) Oscillation frequency vs. Operating ambient temperature
2.4 2.3 2.2 2.1 2.0 1.9 1.8 1.7 1.6 -50
VIN = 3.7 V VOUT = 2.5 V IOUT = 100 mA
0
+50
+100
Input voltage VIN (V)
Operating ambient temperature Ta ( C)
(Continued)
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MB39C015
MOS FET ON resistance vs. Input voltage MOS FET ON resistance RON ()
0.6
0.5
P-ch
0.4
0.3
0.2
N-ch
0.1
Ta = +25 C
0 2.0 3.0 4.0 5.0 6.0
Input voltage VIN (V) P-ch MOS FET ON resistance vs. Operating ambient temperature P-ch MOS FET ON resistance RONP ()
0.6
N-ch MOS FET ON resistance vs. Operating ambient temperature N-ch MOS FET ON resistance RONN ()
0.6
0.5
VIN = 3.7 V
0.5
0.4
0.4
VIN = 3.7 V
0.3
0.3
0.2
VIN = 5.5 V
0.2
VIN = 5.5 V
0.1
0.1
0
0 -50 0 +50 +100
Operating ambient temperature Ta ( C)
-50
0
+50
+100
Operating ambient temperature Ta ( C)
(Continued)
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MB39C015
(Continued) CTL threshold voltage VTH vs. Input voltage
1.4
XPOR output voltage VXPOR vs. Input voltage
6.0
XPOR output voltage VXPOR (V)
CTL threshold voltage VTH (V)
1.2 1.0 0.8 0.6 0.4 0.2 0.0 2.0
VTHHCT VTHLCT
5.0
Ta = +25 C VPORH = 3.7 V setting
4.0
3.0
Ta = +25 C VOUT = 2.5 V
2.0
VXPORL
VXPORH
VTHHCT : Circuit OFF ON VTHLCT : Circuit ON OFF
3.0 4.0 5.0 6.0
1.0
0.0 2.0 3.0 4.0 5.0 6.0
Input voltage VIN (V)
Input voltage VIN (V)
Power dissipation vs. Operating ambient temperature (with thermal via)
3500 3500 3125 3000 2500 2000 1500 1000 500 0 -50 0 +50
Power dissipation vs. Operating ambient temperature (without thermal via) Power dissipation PD (mW)
Power dissipation PD (mW)
3000 2500 2000 1563 1500 1000 625 500 0 -50 0 +50
1250
+85 +100
+85 +100
Operating ambient temperature Ta ( C)
Operating ambient temperature Ta ( C)
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MB39C015
* Switching waveforms
VOUT : 20 mV/div
VLX : 2.0 V/div
ILX : 500 mA/div Ta = +25 C VIN = 3.7 V VOUT = 2.5 V IOUT = 800 mA
1 s/div
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MB39C015
* Startup waveform
VCTL : 5.0 V/div
ILX : 500 mA/div
Ta = +25 C VIN = 3.7 V VOUT = 2.5 V IOUT = 0 A VOUT : 1.0 V/div 10 ms/div
VREFIN capacitor value = 0.1 F
VCTL : 2.0 V/div
ILX : 500 mA/div
VOUT : 1.0 V/div 10 s/div
Ta = +25 C VIN = 3.7 V VOUT = 2.5 V IOUT = 0 A
No VREFIN capacitor
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MB39C015
* Output waveforms at sudden load changes (0 mA 800 mA)
IOUT = 0 mA
IOUT = 800 mA
IOUT = 0 mA
VOUT : 100 mV/div Ta = +25 C VIN = 3.7 V VOUT = 2.5 V
10 s/div
VREFIN capacitor value = 0.1 F
* Output waveforms at sudden load changes (100 mA 800 mA)
IOUT = 100 mA
IOUT = 800 mA
IOUT = 100 mA
VOUT : 100 mV/div
Ta = +25 C VIN = 3.7 V VOUT = 2.5 V 10 s/div
VREFIN capacitor value = 0.1 F
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MB39C015
APPLICATION CIRCUIT EXAMPLES
* APPLICATION CIRCUIT EXAMPLE 1 * An external voltage is input to the reference voltage external input (VREFIN1, VREFIN2) , and the VOUT voltage is set to 3.01 times the VOUT setting gain.
CPU R7 1 M
3 CTL1
DVDD1 11 12 DGND1 14 15 DVDD2 19 20
C3 4.7 F
VIN
C4 4.7 F
DAC1
8 VREFIN1
DGND2 16 17 AVDD 5 C5 0.1 F AGND 4
2 CTL2 R8 1 M MB39C015
DAC2
23 VREFIN2 LX1 13
L1 2.2 H
VOUT1 C1 4.7 F
9 MODE1
OUT1 10
APLI1
22 MODE2 LX2 18 6 VREF OUT2 21 7 VDET
L2 2.2 H
VOUT2
C2 4.7 F APLI2
1 CTLP
XPOR 24
VOUT = 3.01 x VREFIN
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MB39C015
* APPLICATION CIRCUIT EXAMPLE 2 * The voltage of VREF pin is input to the reference voltage external input (VREFIN1, VREFIN2) by dividing resistors. The VOUT1 voltage is set to 2.5 V and VOUT2 voltage is set to 1.8 V.
CPU R7 1 M
3 CTL1
DVDD1 11 12 DGND1 14 15 DVDD2 19 20
C3 4.7 F
VIN
C4 4.7 F
R1 170 k ( 20 k + 150 k ) R2 300 k
8 VREFIN1
DGND2 16 17 AVDD 5 C5 0.1 F
2 CTL2 R8 1 M
AGND MB39C015
4
L1 2.2 H LX1 13
VOUT1 C1 4.7 F
R5 352 k ( 22 k + 330 k ) 23 VREFIN2 R6 300 k 6 VREF
OUT1 10
APLI1
L2 2.2 H LX2 18 C2 4.7 F
VOUT2
9 MODE1 22 MODE2
OUT2 21
APLI2
1 CTLP
XPOR 24 VOUT1 = 3.01 x VREFIN1 VREFIN1 = R2 x VREF R1 + R2 300 k x 1.30 V = 2.5 V 170 k + 300 k 300 k x 1.30 V = 1.8 V 352 k + 300 k
(VREF = 1.30 V) VOUT1 = 3.01 x
VOUT12 = 3.01 x
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DS04-27254-2E
MB39C015
* APPLICATION CIRCUIT EXAMPLE COMPONENTS LIST Component Item Part Number L1 L2 C1 C2 C3 C4 C5 R1 R2 R5 R6 R7 R8 Inductor Inductor Ceramic capacitor Ceramic capacitor Ceramic capacitor Ceramic capacitor Ceramic capacitor Resister Resister Resister Resister Resister Resister VLF4012AT-2R2M MIPW3226D2R2M VLF4012AT-2R2M MIPW3226D2R2M C2012JB1A475K C2012JB1A475K C2012JB1A475K C2012JB1A475K C1608JB1E104K
Specification 2.2 H, RDC = 76 m 2.2 H, RDC = 100 m 2.2 H, RDC = 76 m 2.2 H, RDC = 100 m 4.7 F (10 V) 4.7 F (10 V) 4.7 F (10 V) 4.7 F (10 V) 0.1 F (50 V)
Package SMD SMD SMD SMD 2012 2012 2012 2012 2012 1608 1608 1608 1608 1608 1608 1608 1608
Vendor TDK FDK TDK FDK TDK TDK TDK TDK TDK KOA KOA KOA KOA KOA KOA KOA KOA
RK73G1JTTD D 20 k 20 k RK73G1JTTD D 150 k 150 k RK73G1JTTD D 300 k 300 k RK73G1JTTD D 22 k 22 k RK73G1JTTD D 330 k 330 k RK73G1JTTD D 300 k 300 k RK73G1JTTD D 1 M RK73G1JTTD D 1 M 1 M 0.5% 1 M 0.5%
TDK : TDK Corporation FDK : FDK Corporation KOA : KOA Corporation
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MB39C015
USAGE PRECAUTIONS
1. Do not configure the IC over the maximum ratings
lf the lC is used over the maximum ratings, the LSl may be permanently damaged. It is preferable for the device to normally operate within the recommended usage conditions. Usage outside of these conditions adversely affect the reliability of the LSI.
2. Use the devices within recommended operating conditions
The recommended operating conditions are the conditions under which the LSl is guaranteed to operate. The electrical ratings are guaranteed when the device is used within the recommended operating conditions and under the conditions stated for each item.
3. Printed circuit board ground lines should be set up with consideration for common impedance 4. Take appropriate static electricity measures
* * * * Containers for semiconductor materials should have anti-static protection or be made of conductive material. After mounting, printed circuit boards should be stored and shipped in conductive bags or containers. Work platforms, tools, and instruments should be properly grounded. Working personnel should be grounded with resistance of 250 k to 1 M between body and ground.
5. Do not apply negative voltages
The use of negative voltages below -0.3 V may create parasitic transistors on LSI lines, which can cause abnormal operation.
ORDERING INFORMATION
Part number MB39C015QN-E1 Package 24-pin plastic QFN (LCC-24P-M09) Remarks Lead-free version
RoHS COMPLIANCE INFORMATION OF LEAD (Pb) FREE VERSION
The LSI products of FUJITSU MICROELECTRONICS with "E1" are compliant with RoHS Directive, and has observed the standard of lead, cadmium, mercury, hexavalent chromium, polybrominated biphenyls (PBB) , and polybrominated diphenyl ethers (PBDE). A product whose part number has trailing characters "E1" is RoHS compliant.
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MB39C015
MARKING FORMAT (LEAD FREE VERSION)
Lead-free version
E1X
XXXXX
INDEX
LABELING SAMPLE (LEAD FREE VERSION)
Lead-free mark JEITA logo JEDEC logo
The part number of a lead-free product has the trailing characters "E1".
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MB39C015
MB39C015QN-E1 RECOMMENDED CONDITIONS OF MOISTURE SENSITIVITY LEVEL
[FUJITSU MICROELECTRONICS Recommended Mounting Conditions] Item Condition Mounting Method Mounting times Before opening Storage period Storage conditions From opening to the 2nd reflow IR (infrared reflow) 2 times Please use it within two years after Manufacture.
5 C to 30 C, 70%RH or less (the lowest possible humidity)
[Parameters for Each Mounting Method] IR (infrared reflow)
260 C 255 C
170 C to 190 C
RT
(b)
(c)
(d)
(e)
H rank : 260 C Max (a) Temperature Increase gradient (b) Preliminary heating (c) Temperature Increase gradient (d) Actual heating (d')
(a)
(d')
(e) Cooling
: Average 1 C/s to 4 C/s : Temperature 170 C to 190 C, 60s to 180s : Average 1 C/s to 4 C/s : Temperature 260 C Max; 255 C or more, 10s or less : Temperature 230 C or more, 40s or less or Temperature 225 C or more, 60s or less or Temperature 220 C or more, 80s or less : Natural cooling or forced cooling
Note : Temperature : the top of the package body
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MB39C015
EVALUATION BOARD SPECIFICATION
The MB39C015 Evaluation Board provides the proper for evaluating the efficiency and other characteristics of the MB39C015. * Terminal information Symbol Power supply terminal In standard condition 3.1 V to 5.5 V* VIN * : When the VIN/VOUT difference is to be held within 0.6 V or less, such as for devices with a standard output voltage (VOUT1 = 2.5 V) when VIN < 3.1 V, FUJITSU MICROELECTRONICS recommends changing the output capacity (C1, C2) to 10 F. Output terminals (VOUT1: CH1, VOUT2: CH2) Power supply terminal for setting the CTL1, CTL2 and CTLP terminals. Use by connecting with CTL1,CTL2 and CTLP. Direct supply terminal of CTL (CTL1 : for CH1, CTL2 : for CH2) CTL1, CTL2 = 0 V to 0.8 V (Typ.) : Shutdown CTL1, CTL2 = 0.95 V (Typ.) to VIN (5 V Max) : Normal operation TEST terminal MODE1, MODE2 = OPEN or GND Reference voltage output terminal VREF = 1.30 V (Typ.) External reference voltage input terminals (VREFIN1 : for CH1, VREFIN2 : for CH2) When an external reference voltage is supplied, connect it to the terminal for each channel. Voltage input terminal for voltage detection Voltage detection circuit block control terminal CTLP = L : Voltage detection circuit block stop CTLP = H : Normal operation Voltage detection circuit output terminal The N-ch MOS open drain circuit is connected. Pull-up voltage terminal for the XPOR terminal Ground terminal Connect power supply GND to the PGND terminal next to the VIN terminal. Connect output (load) GND to the PGND terminal between the VOUT1 terminal and the VOUT2 terminal. Ground terminal
Functions
VOUT1, VOUT2 VCTL
CTL1, CTL2
MODE1, MODE2 VREF
VREFIN1, VREFIN2
VDET CTLP
XPOR VXPOR
PGND
AGND
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MB39C015
* Startup terminal information Terminal name Condition CTL1 L : Open H : Connect to VCTL L : Open H : Connect to VCTL L : Open H : Connect to VCTL ON/OFF switch for CH1 L : Shutdown H : Normal operation. ON/OFF switch for CH2 L : Shutdown H : Normal operation. ON/OFF switch for the voltage detection block L: Stops the voltage detection circuit H: Normal operation.
Functions
CTL2
CTLP
* Jumper information JP JP1 JP2 JP3 JP6 *
Functions Short-circuited in the layout pattern of the board (normally used shorted). Short-circuited in the layout pattern of the board (normally used shorted). Normally used shorted (0 ) Normally used shorted (0 )
Setup and checkup
(1) Setup (1) -1. Connect the CTL1 terminal and the CTL2 terminal to the VCTL terminal. (1) -2. Put it into "L" state by connecting the CTLP terminal to the AGND pad. (1) -3. Connect the power supply terminal to the VIN terminal, and the power supply GND terminal to the PGND terminal. Make sure PGND is connected to the PGND terminal next to the VIN terminal. (Example of setting power-supply voltage : 3.7 V) (2) Checkup Supply power to VIN. The IC is operating normally if VOUT1 = 2.5 V (Typ) and VOUT2 = 1.8 V (Typ).
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MB39C015
* Component layout on the evaluation board (Top View)
VOUT2 MODE2 L2
C2
PGND
C1
VOUT1 PGND L1
C4 VREFIN2 C7 R5 R9 MODE2 MODE1 XPOR SW1 R3 VXPOR M1
C3 VIN C6 R2 R1 - 1 R1 - 2 R7 R6 - 2 R6 - 1 JP3 VREF VCTL
R4 - 2
C5 R4 - 1 CTL1 CTLP JP6 AGND
MODE1
CTL2
R1 - 3 Short
Open
VREFIN1
MB39C015EVB-06 Rev.1.0
CTL2 R8 CTL1 CTLP R10 VDET
Top Side (Component side)
Bottom Side (Soldering side)
2PJ
1PJ
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MB39C015
* Evaluation board layout (Top View)
Top Side (Layer1)
Inside GND (Layer2)
Inside VIN & GND (Layer3)
Bottom Side (Layer4)
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MB39C015
* Connection diagram
IIN VIN PGND VCTL R8 CTL1 SW1* 9 MODE1 DVDD2 19 20 MODE1 VREF R6-1 R6-2 VREFIN1 C6 R7 MB39C015 SW1* 2 CTL2 R9 CTL2 SW1* 22 MODE2 OUT1 10 MODE2 VREF R4-1 R4-2 VREFIN2 C7 R5 JP2 VREF VREF VIN R1-3 VDET R1-1 SW1* 1 CTLP R10 CTLP R1-2 R2 XPOR 24 7 VDET R3 XPOR VXPOR 6 VREF OUT2 21 23 VREFIN2 LX2 18 C2 IOUT L2 VOUT2 PGND LX1 13 C1 JP1 L1 VOUT1 IOUT 8 VREFIN1 AGND 4 DGND2 16 17 AVDD 5 C5 AGND JP6 C4 JP3 SW1* 3 CTL1 DVDD1 11 12 DGND1 14 15 C3 VIN
*
Not mounted
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MB39C015
* Component list COMPOPart Name NENT M1 L1 L2 C1 C2 C3 C4 C5 C6 C7 R1-1 R1-2 R1-3 R2 R3 R4-1 R4-2 R5 R6-1 R6-2 R7 R8 R9 R10 SW1 JP1 JP2 JP3 JP6 IC Inductor Inductor
MODEL NUMBER MB39C015QN VLF4012AT-2R2M VLF4012AT-2R2M
SPECIFICATION 2.2 H, RDC = 76 m 2.2 H, RDC = 76 m 4.7 F (10 V) 4.7 F (10 V) 4.7 F (10 V) 4.7 F (10 V) 0.1 F (50 V) 0.1 F (50 V) 0.1 F (50 V) 50 m Max, 1 A 300 k 0.5% 50 m Max, 1 A 75 k 0.5% 22 k 0.5% 330 k 0.5% 300 k 0.5% 20 k 0.5% 150 k 0.5% 300 k 0.5%
PACKAGE VENDOR QFN-24 SMD SMD 2012 2012 2012 2012 1608 1608 1608 1608 1608 1608 1608 1608 1608 1608 1608 1608 1608 1608 1608 1608 1608 1608 1608 FML TDK TDK TDK TDK TDK TDK TDK TDK TDK KOA SSM KOA SSM KOA SSM SSM SSM SSM SSM SSM KOA KOA KOA KOA KOA
REMARK
Ceramic capacitor C2012JB1A475K Ceramic capacitor C2012JB1A475K Ceramic capacitor C2012JB1A475K Ceramic capacitor C2012JB1A475K Ceramic capacitor C1608JB1H104K Ceramic capacitor C1608JB1H104K Ceramic capacitor C1608JB1H104K Jumper Resister Jumper Resister Resister Resister Resister Resister Resister Resister Resister Resister Resister Resister Switch Jumper Jumper Jumper Jumper RK73Z1J RK73Z1J RK73Z1J RR0816P-304-D RK73Z1J RR0816P-753-D RR0816P-223-D RR0816P-334-D RR0816P-304-D RR0816P-203-D RR0816P-154-D RR0816P-304-D
RK73G1JTTD D 1 M 1 M 0.5%
RK73G1JTTD D 1 M 1 M 0.5% RK73G1JTTD D 1 M 1 M 0.5% RK73G1JTTD D 1 M 1 M 0.5% 50 m Max, 1 A 50 m Max, 1 A
Not mounted Patternshorted Patternshorted
Note : These components are recommended based on the operating tests authorized. FML TDK KOA SSM 40
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: FUJITSU MICROELECTRONICS LIMITED : TDK Corporation : KOA Corporation : SUSUMU Co., Ltd DS04-27254-2E
MB39C015
EV BOARD ORDERING INFORMATION
EV Board Part No. MB39C015EVB-06 EV Board Version No. MB39C015EVB-06 Rev.1.0 Remarks QFN-24
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MB39C015
PACKAGE DIMENSION
24-pin plastic QFN Lead pitch Sealing method 0.50 mm Plastic mold
(LCC-24P-M09)
24-pin plastic QFN (LCC-24P-M09)
4.000.10 (.157.004)
2.700.10 (.106.004)
INDEX AREA
4.000.10 (.157.004)
2.700.10 (.106.004)
0.250.05 (.010.002)
3-R0.20 (3-R.008) 0.50(.020) TYP
0.400.10 (.016.004) 1PIN CORNER (C0.25(C.010))
0.08(.003) 0.00(.000) MIN
C
0.85(.033) MAX 0.20(.008)
2006-2008 FUJITSU MICROELECTRONICS LIMITED C24059S-c-2-3
Dimensions in mm (inches). Note: The values in parentheses are reference values.
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CONTENTS
page DESCRIPTION .................................................................................................................................................... 1 FEATURES .......................................................................................................................................................... 1 APPLICATIONS .................................................................................................................................................. 1 PIN ASSIGNMENT ............................................................................................................................................. 2 PIN DESCRIPTIONS .......................................................................................................................................... 3 I/O PIN EQUIVALENT CIRCUIT DIAGRAM ................................................................................................... 4 BLOCK DIAGRAM .............................................................................................................................................. 5 FUNCTION OF EACH BLOCK ......................................................................................................................... 7 ABSOLUTE MAXIMUM RATINGS ................................................................................................................... 9 RECOMMENDED OPERATING CONDITIONS ............................................................................................ 10 ELECTRICAL CHARACTERISTICS ................................................................................................................ 11 TEST CIRCUIT FOR MEASURING TYPICAL OPERATING CHARACTERISTICS ................................ 13 APPLICATION NOTES ...................................................................................................................................... 14 EXAMPLE OF STANDARD OPERATION CHARACTERISTICS ............................................................... 21 APPLICATION CIRCUIT EXAMPLES ............................................................................................................. 29 USAGE PRECAUTIONS ................................................................................................................................... 32 ORDERING INFORMATION ............................................................................................................................. 32 RoHS COMPLIANCE INFORMATION OF LEAD (Pb) FREE VERSION .................................................. 32 MARKING FORMAT (LEAD FREE VERSION) .............................................................................................. 33 LABELING SAMPLE (LEAD FREE VERSION) ............................................................................................. 33 MB39C015QN-E1 RECOMMENDED CONDITIONS OF MOISTURE SENSITIVITY LEVEL ....... 34 EVALUATION BOARD SPECIFICATION ....................................................................................................... 35 EV BOARD ORDERING INFORMATION ....................................................................................................... 41 PACKAGE DIMENSION .................................................................................................................................... 42
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MB39C015
FUJITSU MICROELECTRONICS LIMITED
Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0722, Japan Tel: +81-3-5322-3347 Fax: +81-3-5322-3387 http://jp.fujitsu.com/fml/en/ For further information please contact: North and South America FUJITSU MICROELECTRONICS AMERICA, INC. 1250 E. Arques Avenue, M/S 333 Sunnyvale, CA 94085-5401, U.S.A. Tel: +1-408-737-5600 Fax: +1-408-737-5999 http://www.fma.fujitsu.com/ Europe FUJITSU MICROELECTRONICS EUROPE GmbH Pittlerstrasse 47, 63225 Langen, Germany Tel: +49-6103-690-0 Fax: +49-6103-690-122 http://emea.fujitsu.com/microelectronics/ Korea FUJITSU MICROELECTRONICS KOREA LTD. 206 KOSMO TOWER, 1002 Daechi-Dong, Kangnam-Gu,Seoul 135-280 Korea Tel: +82-2-3484-7100 Fax: +82-2-3484-7111 http://www.fmk.fujitsu.com/ Asia Pacific FUJITSU MICROELECTRONICS ASIA PTE LTD. 151 Lorong Chuan, #05-08 New Tech Park, Singapore 556741 Tel: +65-6281-0770 Fax: +65-6281-0220 http://www.fujitsu.com/sg/services/micro/semiconductor/ FUJITSU MICROELECTRONICS SHANGHAI CO., LTD. Rm.3102, Bund Center, No.222 Yan An Road(E), Shanghai 200002, China Tel: +86-21-6335-1560 Fax: +86-21-6335-1605 http://cn.fujitsu.com/fmc/ FUJITSU MICROELECTRONICS PACIFIC ASIA LTD. 10/F., World Commerce Centre, 11 Canton Road Tsimshatsui, Kowloon Hong Kong Tel: +852-2377-0226 Fax: +852-2376-3269 http://cn.fujitsu.com/fmc/tw
All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with sales representatives before ordering. The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose of reference to show examples of operations and uses of FUJITSU MICROELECTRONICS device; FUJITSU MICROELECTRONICS does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating the device based on such information, you must assume any responsibility arising out of such use of the information. FUJITSU MICROELECTRONICS assumes no liability for any damages whatsoever arising out of the use of the information. Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use or exercise of any intellectual property right, such as patent right or copyright, or any other right of FUJITSU MICROELECTRONICS or any third party or does FUJITSU MICROELECTRONICS warrant non-infringement of any third-party's intellectual property right or other right by using such information. FUJITSU MICROELECTRONICS assumes no liability for any infringement of the intellectual property rights or other rights of third parties which would result from the use of information contained herein. The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite). Please note that FUJITSU MICROELECTRONICS will not be liable against you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. Exportation/release of any products described in this document may require necessary procedures in accordance with the regulations of the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws. The company names and brand names herein are the trademarks or registered trademarks of their respective owners.
Edited Business & Media Promotion Dept.
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